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| SKM100GB12T4G Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE 15 V VCES 1200 V VGES tpsc Tj Inverse diode IF SKM100GB12T4G Conditions Values 1200 Unit V A A A A V s C A A A A A C A C V Tj = 175 C Tc = 25 C Tc = 80 C 154 118 100 300 -20 ... 20 SEMITRANS(R)3 Fast IGBT4 Modules Tj = 150 C 10 -40 ... 175 Tj = 175 C Tc = 25 C Tc = 80 C 118 89 100 300 486 -40 ... 175 500 -40 ... 125 IFnom Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) IFRM IFSM Tj Module It(RMS) Tstg Visol IFRM = 3xIFnom tp = 10 ms, sin 180, Tj = 25 C AC sinus 50Hz, t = 1 min 4000 Typical Applications * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) IC = 100 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 5.54 0.41 0.32 560 2.0 Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C 167 37 16.1 380 78 8.6 0.29 1.85 2.2 0.8 0.7 10.5 15.0 5.8 0.1 2.1 2.4 0.9 0.8 12.0 16.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 VGE=VCE, IC = 3.4 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 100 A VGE = 15 V RG on = 1 RG off = 1 di/dton = 3300 A/s di/dtoff = 1300 A/s per IGBT GB (c) by SEMIKRON Rev. 0 - 19.02.2009 1 SKM100GB12T4G Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 100 A Tj = 150 C di/dtoff = 1600 A/s T = 150 C j VGE = 15 V Tj = 150 C VCC = 600 V per diode min. typ. 2.22 2.18 1.3 0.9 9.2 12.8 47 17 6 max. 2.54 2.5 1.5 1.1 10.4 14.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 100 A VGE = 0 V chip VF0 SEMITRANS(R)3 Fast IGBT4 Modules SKM100GB12T4G IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.49 15 20 K/W nH m m Features * IGBT4 = 4. Generation (Trench)IGBT * VCEsat with positive temperature coefficient * High short circuit capability, self limiting to 6 x ICNOM * Soft switching 4. Generation CAL diode (CAL4) Rth(c-s) Ms Mt w terminal-chip per module to heat sink M6 TC = 25 C TC = 125 C 3 to terminals M6 2.5 0.25 0.5 0.02 0.038 5 5 325 K/W Nm Nm Nm g Typical Applications * AC inverter drives * UPS * Electronic welders at fsw up to 20 kHz Remarks * Case temperature limited to Tc = 125C max, recomm. Top = -40 ... +150C, product rel. results valid for Tj = 150 GB 2 Rev. 0 - 19.02.2009 (c) by SEMIKRON SKM100GB12T4G Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 0 - 19.02.2009 3 SKM100GB12T4G Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 - 19.02.2009 (c) by SEMIKRON SKM100GB12T4G Semitrans 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 0 - 19.02.2009 5 |
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